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AO3415AL
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3415AL uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications.
Product Summary
Parameter VDS ID (at VGS=-4.5V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) RDS(ON) (at VGS= -1.8V) -20V -4A < 45m < 54m < 68m
- RoHS Compliant - Halogen Free
ESD Protected
SOT23 Top View Bottom View
D
D
G
S
G
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current TA=25C TA=70C TA=25C Power Dissipation B TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead ID IDM PD TJ, TSTG
Maximum -20 8 -4 -3.5 -30 1.5 1 -55 to 150
Units V V A
Pulsed Drain Current C
W C
Symbol
t 10s Steady-State Steady-State
RJA RJL
Typ 65 85 43
Max 80 100 52
Units C/W C/W C/W
Rev 0: January 2009
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Page 1 of 5
AO3415AL
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-20V, VGS=0V TJ=55C VDS=0V, VGS= 8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-4A TJ=125C RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-4A VGS=-1.8V, ID=-2A VGS=-1.5V, ID=-1A gFS VSD IS Forward Transconductance VDS=-5V, ID=-4A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current 620 VGS=0V, VDS=-10V, f=1MHz 80 50 7.4 VGS=-4.5V, VDS=-10V, ID=-4A 1.2 1 VGS=-4.5V, VDS=-10V, RL=2.5, RGEN=3 IF=-4A, dI/dt=500A/s 11 24 -0.35 -30 37 52 45 54 65 20 -0.64 -1 -2 780 115 80 9.3 1.5 1.8 120 240 2.8 2 14 30 17 36 940 150 110 11 1.8 2.5 45 62 54 68 -0.57 Min -20 -1 -5 10 -0.85 Typ Max Units V A A V A m m m m S V A pF pF pF nC nC nC ns ns s s ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-4A, dI/dt=500A/s
A. The value of RJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.
Rev 0: January 2009 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: January 2009
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Page 2 of 5
AO3415AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40 35 30 25 ID (A) 20 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 100 VGS=-1.5V 80 RDS(ON) (m) Normalized On-Resistance 1.60 ID=-4A, VGS=-4.5V 1.40 ID=-4A, VGS=-2.5V VGS=-1.5V 0 0 0.5 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) -2.0V -2.5V 9 ID(A) 6 3 -8V -4.5V -3.0V 12 15 VDS=-5V
125C
25C
60 VGS=-1.8V 40 VGS=-2.5V VGS=-4.5V 20 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
1.20
1.00
17 5 ID=-2A, VGS=-1.8V 2 10
0.80 0 25 50 75 100 125 150 175 Temperature (C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
120 ID=-4A 100 RDS(ON) (m) 80 125C 60 40 20 0 2 4 25C 6 8
1.0E+01 1.0E+00
40
1.0E-01 IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 125C 25C
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 0: January 2009
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Page 3 of 5
AO3415AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 VDS=-10V ID=-4A Capacitance (pF) 1400 1200 1000 800 600 400 200 0 0 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 2 4 12 0 Crss 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 5 20 Coss Ciss
4
VGS (Volts)
3
2
1
0
100.0
1000
10.0
10s
Power (W)
TJ(Max)=150C TA=25C 100
ID (Amps)
RDS(ON) limited
100 1ms 10ms
100ms 10s
1.0
10
0.1
TJ(Max)=150C TA=25C
DC
1 0.00001 0.001 0.1 10 1000
0.0 0.01
0.1
1 VDS (Volts)
10
100
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 RJA=100C/W
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 PD Single Pulse Ton 0.01 0.1 1 T 10 100 1000
0.01
0.001 0.00001
0.0001
0.001
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: January 2009
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Page 4 of 5
AO3415AL
Gate Charge Test Circuit & W aveform
Vgs Qg -10V
VDC
VDC
DUT Vgs Ig
R esistive S w itching T est C ircuit & W avefo rm s
RL V ds V gs V gs Rg V gs V ds DUT
VDC
D io de R ec overy T est C ircuit & W aveform s
V ds + DUT Vg s
t rr
Vds -
Isd V gs
L
+
VD C
Ig
-
Rev 0: January 2009
+
Charge
t on td(on) tr t d(o ff) t off tf
+
V dd -V d s
-
-
+
-
Vds
Qgs
Qgd
V dd
90%
10%
Q rr = -
Idt
-Isd
-I F
d I/d t -I R M V dd
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Page 5 of 5

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